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BOOK CHAPTER

  1. G.E.Shtengel, G.L.Belenky, M.S.Hybertsen, R.F.Kazarinov, and D.A.Ackerman , in Selected Topics in Electronics and Systems - Vol. 16, ”ADVANCES IN SEMICONDUCTOR LASERS AND APPLICATIONS TO OPTOELECTRONICS”, ISBN 981-02-4257-3, Aug.2000.

PAPERS

  1. B. Witzigmann, M.S. Hybertsen, C.L. Reynolds, Jr., G.L. Belenky, L. Shterengas, and G.E. Shtengel, "Microscopic Simulation of the Temperature Dependence of Static and Dynamic 1.3um Multi-Quantum-Well Laser Performance", IEEE J. of Quantum.Electron., vol.39, no.1, pp.120-129, Jan. 2003.

  2. E.Ibragimov, G.Shtengel, S.Suh, and M.Rivera, “Statistical Correlation between First and Second Order PMD”, IEEE J.Lightwave Techn., vol.20, no.4, pp. 586-590, 2002.

  3. G.L. Belenky, C.L. Reynolds, Jr., L. Shterengas, M.S. Hybertsen, D.V. Donetsky, G.E. Shtengel, and S. Luryi, "Effect of p-doping on the temperature dependence of differential gain in FP and DFB 1.3 mm InGaAsP-InP multiple-quantum-well lasers", IEEE Photonics Technology Letters, v.12, no.8, pp. 969-971, Aug. 2000.

  4. G.E.Shtengel, G.L.Belenky, M.S.Hybertsen, R.F.Kazarinov, and D.A.Ackerman,  "Advances in Measurements of Physical Parameters of Semiconductor Lasers" , J. High Speed Electron. and Syst. vol. 9, 901-940,1999.

  5. G.L.Belenky, C.L.Reynolds, Jr., D.V.Donetsky, G.E.Shtengel, M.S.Hybertsen, M.A.Alam, G.A.Baraff, R.K. Smith, R.F.Kazarinov, J.Winn, and L.E.Smith, ”Role of p-Doping Profile and Regowth on the static Characteristics of 1.3mm MQW InGaAsP-InP Lasers: Experiment and Modeling”, IEEE J. of Quantum.Electron., vol.35, no.10, pp.1515-1521, Oct. 1999.

  6. G.L.Belenky, D.V.Donetsky, C.L.Reynolds, Jr., R.F.Kazarinov, G.E.Shtengel, S.Luryi, and J.Lopata,  "Temperature Performance of 1.3mm InGaAsP-InP Lasers with Different Profile of p-Doping" , IEEE Photon.Techn.Lett., vol.9, no.12, pp.1558-1560, Dec. 1997.

  7. R.F.Kazarinov, G.E.Shtengel,  "Effect of Carrier Heating on Static Linearity of MQW InGaAsP Lasers" , IEEE  J.Lightwave Techn., vol.15, no.12, pp.2284-2286, Dec.1997.

  8. G.E.Shtengel, R.F.Kazarinov, G.L.Belenky, and C.L.Reynolds, Jr.,  "Wavelength Chirp and Dependence of Carrier Temperature on Current in MQW InGaAsP Lasers" , IEEE J. of Quantum.Electron., vol.33, no.8, pp.1396-1402, Aug. 1997.

  9. P.A.Morton, G.E.Shtengel, L.D.Tzeng, R.D.Yadvish, T.Tanbun-Ek, and R.A.Logan, “38.5 km Error Free Transmission in Standard Fiber Using a Low Chirp, Spectrally Filtered, Directly Modulated 1.55mm DFB Laser”, Electron.Lett., vol.33, no.4, pp.310-311, Feb. 1997.

  10. D.A.Ackerman, G.E.Shtengel, P.A.Morton, L.M.Zhang, J.E.Johnson, C.G.Bethea, L.J.P.Ketelsen, “Identifying sources of residual reflections within integrated electroabsorption modulated laser cavities”, OFC’97, paper WG7, pp.142-143, Feb.1997.

  11. D.A.Ackerman, L.M.Zhang, P.A.Morton, G.E.Shtengel, and J.E.Sheridan, “Real-world distributed feedback lasers: measured, modeled and applied to CATV”, Proc. SPIE, vol.2693, pp.600-611, Feb. 1996.

  12. G.E.Shtengel, D.A.Ackerman, P.A.Morton, “True carrier lifetime measurements of semiconductor laser”, Electron.Lett., vol.31, no.20, pp.1747-1748, Sept. 1995.

  13. G.E.Shtengel, D.A.Ackerman, P.A.Morton, E.J.Flynn, M.S.Hybertsen, “Impedance-Corrected Carrier Lifetime Measurements in 1.3 mm InGaAsP lasers”, Appl.Phys.Lett.,vol.67, no.11, Sept. 1995.

  14. P.A.Morton, D.A.Ackerman, G.E.Shtengel, R.F.Kazarinov, M.S.Hybertsen, T.Tanbun-Ek, R.A.Logan, A.M.Sergent, "Material Characteristics of 1.55 mm High-Speed MQW Lasers" , IEEE Photon.Techn.Lett., vol.7, no.8, pp.833-835, Aug. 1995.

  15. G.E.Shtengel and D.A.Ackerman,  “Internal optical loss measurements in 1.3 mm InGaAsP lasers”, Electron.Lett., vol.31, no.14, pp.1157-1159, July 1995.

  16. D.A.Ackerman, G.E.Shtengel, M.S.Hybertsen, P.A.Morton, R.F.Kazarinov, T.Tanbun-Ek, and R.A.Logan, "Analysis of Gain in Determining T0 in 1.3 mm Semiconductor Lasers", IEEE J. Selected Topics in Quantum Electron., vol.1, no.2, pp.250-263, July 1995.

  17. D.A.Ackerman, P.A.Morton, G.E.Shtengel, M.S.Hybertsen, R.F.Kazarinov, T.Tanbun-Ek, and R.A.Logan, “Analysis of T0 in 1.3 mm multi-quantum-well and bulk lasers, Appl.Phys.Lett., vol.66, no.20, p.2613, May 1995.

  18. J.W.Bae, G.E.Shtengel, D.V.Kuksenkov, H.Temkin, and P.Brusenbach, “Threshold carrier density in vertical cavity surface emitting lasers”, Appl.Phys.Lett., vol.66, no.16, p.2031, Apr.1995.

  19. G.E.Shtengel, H.Temkin, T.Uchida, M.Kim, P.Brusenbach, and, C.Parsons, “Spontaneous emission factor and its scaling in surface emitting lasers”, Appl.Phys.Lett., vol.64, no.9, p.1062, Feb.1994.

  20. V.B.Gorfinkel, G.A.Kompa, S.A.Gurevich, I.E.Chebunina, G.E.Shtengel, “High-Frequency Modulation of a QW Diode Laser by Dual Modal Gain and Pumping Current Control”, Inst. Phys. Conf. Series, vol.136: Ch.5, pp.271-276, 1994.

  21. G.E.Shtengel, H.Temkin, P.Brusenbach, T.Uchida, M.Kim, C.Parsons, W.E.Quinn, and S.E.Swirhun, “High-Speed Vertical-Cavity Surface Emitting Laser”, Photon.Techn.Lett., vol.5, no.12, p.1359, Dec.1993.

  22. A.E.Avrutin, I.E.Chebunina, I.A.Eliashevitch, S.A.Gurevich, M.E.Portnoi, and G.E.Shtengel., “TE and TM optical gains in AlGaAs single-quantum-well-lasers”, Semicond.Sci.Technol, vol.8, no.1, p.80-87, Jan 1993.

  23. E.L.Portnoi, M.A.Golov, G.E.Shtengel, V.V.Dobretzov, E.A.Avrutin, "250-GHz Passive Mode- Locking of Semiconductor Injection Lasers", Digest of "Semiconductor and Integrated Opto- Electronics (SIOE'92)", University of Wales, Cardiff, UK, April 1992.

  24. S.A.Gurevich, V.B.Gorfinkel, G.E.Shtengel, and I.E.Chebunina, "High-Frequency Modulation and Short Optical Pulse Generation from a Laser Diode with the gain Governed by Free Carrier Heating", Digest of 13-th International Semiconductor Laser Conference, paper D-36, 1992.

  25. E.A.Avrutin, S.A.Gurevich. F.N.Timofeev, and G.E.Shtengel, “Influence of the Size-Quantization Effect on the Dynamic Characteristics of (AlGa)As SQW Lasers”, A.F.Ioffe Physical-Technical Institute Bulletin, no.1, p.21, 1990.

CONFERENCE TALKS

  1. G.Shtengel, E.Ibragimov, S.Suh, and M.Rivera,  “Statistical dependence between first and second-order PMD”, Optical Fiber Communications Conference, OFC'2001, paper MO3, Anaheim, USA, March 2001.

  2. A.E.Bond, G.E.Shtengel, P.Singh, Y.A.Akulova, and C.L.Reynolds, "High Speed Packaged Electroabsorption Modulators for Optical Communications", Electronic Components & Technology Conference, Las Vegas, USA, May 21-24, 2000.

  3. G.E.Shtengel, A.E.Bond, Y.A.Akulova, and C.L.Reynolds, “High-speed InGaAsP Electroabsorption modulators: dependence of  the device characteristics on the mesa design”, Optical Fiber Communications Conference, OFC'2000, paper FG3-1, Baltimore, USA, March 2000.

  4. G.L.Belenky, C.L.Reynolds, Jr., D.V.Donetsky, M.S.Hybertsen, L.Shterengas, G.E.Shtengel, R.F.Kazarinov, Characterization of heterolasers with different p-doping profile, invited talk, p.3944, Proc. of the Conf. Photonics West, Physics and Simulation of Optoelectronic Devices VIII, San Jose, January 2000.

  5. A.E.Bond, G.E.Shtengel, Y.A.Akulova, and C.L.Reynolds, "43GHz modulation bandwidth packaged InGaAsP MQW electroabsorption modulators with integrated mode converters", European Conference on Optical Communication, ECOC'99, post-deadline paper PD1-7, Nice, France, 1999.

  6. B.Mikkelsen, G.Raybon, R.-J.Essiambre, K.Dreyer, S.Yikai, J.E.Johnson, G.E.Shtengel, A.E.Bond, D.G.Moodie and A.D.Ellis, "160 Gbit/s single-channel transmission over 300 km nonzero dispersion shifted fiber with semiconductor based transmitter and demultiplexer", European Conference on Optical Communication, ECOC'99, post-deadline paper PD2-3, Nice, France, 1999.

  7. M.S.Hybertsen, M.A.Alam, G.A.Baraff, R.K.Smith, G.E.Shtengel, C.L.Reynolds, Jr., R.F. Kazarinov, G.L.Belenky, D.V.Donetsky, "Role of doping profile on semiconductor laser performance: simulation and experiment", Conference on Lasers and Electro-Optics, CLEO'99, paper CWI3 (Invited), Baltimore, USA, May 1999.

  8. M.N.Khan, G.E.Shtengel, S.Chandrasekhr, E.C.Burrows, C.A.Burrus, J.Sarathy, J.A.Grenko, J.M.Vandenberg, S.K.Sputz, M.Geva, R.W.Glew, "Theoretical prediction and experimental verification of quantum well electroabsorption modulators with bandwidths exceeding 40 GHz", Optical Fiber Communications Conference, OFC'99, paper ThT4, San Diego, USA, Feb.1999.

  9. G.E.Shtengel, R.F.Kazarinov, L.E.Eng,  "Simultaneous Laser Wavelength Locking and Spectral Filtering Using Fiber Bragg Grating", 16th IEEE International Semiconductor Laser Conference, IEEE ISLC'98, paper ThC5, Nara, Japan, Oct. 1998.

  10. M.S.Hybertsen, M.A.Alam, G.A.Baraff, R.K. Smith, and G.E.Shtengel, "Microscopic Simulation of InGaAsP Diode Laser Performance", 16th IEEE International Semiconductor Laser Conference, 16th IEEE International Semiconductor Laser Conference, IEEE ISLC'98, paper TuB4, Nara, Japan, Oct. 1998.

  11. J.Sheridan-Eng, G.E.Shtengel, and R.F.Kazarinov, "Measurement of Chirp in Semiconductor lasers Using Interferometric Intensity Noise", IEEE Lasers and Electro-Optics Society 1997 Annual Meeting, LEOS'97, paper WZ5, San Francisco, USA, Nov. 1997.

  12. D.A.Ackerman, G.E.Shtengel, P.A.Morton, L.M.Zhang, J.E.Johnson, C.G.Bethea, L.J.P.Ketelsen, "Identifying sources of residual reflections within integrated electroabsorption modulated laser cavities", Optical Fiber Communication Conference, OFC'97, paper WG7, Dallas, USA, Feb. 1997.

  13. G.E.Shtengel, P.A.Morton, R.F.Kazarinov, D.A.Ackerman, M.S.Hybertsen, G.L.Belenky, and C.L.Reynolds, "Experimental study of physical parameters of semiconductor lasers", OSA Conference on Physics and Simulation of Optoelectronic Devices V, SPIE’97, Invited paper, San Jose, USA, Feb. 1997.

  14. G.E.Shtengel, “Device Characterization for Optimization of High-Performance Semiconductor Lasers”, IEEE Lasers and Electro-Optics Society 1996 Annual Meeting, LEOS’96, paper ThP2 (Invited), Boston, USA, Nov. 1996.

  15. G.E.Shtengel, D.A.Ackerman, P.A.Morton, E.J.Flynn, M.S.Hybertsen, “Impedance-Corrected Carrier Lifetime Measurements of Semiconductor Lasers”, IEEE Lasers and Electro-Optics Society 1995 Annual Meeting, LEOS'95, paper SCL6.3, San Francisco, USA, Oct. 1995.

  16. G.E.Shtengel, D.A.Ackerman, P.A.Morton,  "True Carrier Lifetime Measurements of Semiconductor Lasers", 53rd Annual Device Research Conference, DRC'95, postdeadline paper, Charlottesville, USA, June 1995.

  17. M.S.Hybertsen, R.F.Kazarinov, G.A.Baraff, D.A.Ackerman, G.E.Shtengel, P.A.Morton, T.Tanbun-Ek, and R.A.Logan, "Modeling of gain for InGaAsP Lasers", OSA Conference on Physics and Simulation of Optoelectronic Devices III, SPIE’95, Invited paper, San Jose, USA, Feb. 1995.

  18. S.A.Gurevich, I.E.Chebunina, M.S.Shatalov, G.E.Shtengel, and V.B.Gorfinkel, “High-Frequency Operation of SQW Diode Laser Modulated by Dual Optical Confinement and Pumping Current Density Control", 14th IEEE International Semiconductor Laser Conference, IEEE ISLC'94, paper Th3.3, Maui, USA, Sep.1994.

  19. D.A.Ackerman, P.A.Morton, R.F.Kazarinov, M.S.Hybertsen, G.E.Shtengel, T.Tanbun-Ek, and R.A.Logan, “Study of gain in determining T0 in 1.3 mm Semiconductor Lasers", 14th IEEE International Semiconductor Laser Conference, IEEE ISLC'94, paper Th3.3, Maui, USA, Sep.1994.

  20. E.A. Avrutin, I.E. Chebunina, I.A. Elyashevich, S.A. Gurevich, P.S. Kop'ev, M.E. Portnoi, and G.E. Shtengel, “Band-mixing effect on TE- and TM-optical gains in AlGaAs/GaAs BH SQW lasers”, 12th IEEE International Semiconductor Laser Conference , IEEE ISLC'90, pp. 190 –191,1990.